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APTGS10X120RTP2 APTGS10X120BTP2
Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module
Application * AC Motor control
VCES = 1200V IC = 10A @ Tc = 80C
Features * Non Punch Through (NPT) Low Loss IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Very low stray inductance High level of integration Internal thermistor for temperature monitoring
* * *
APTGS10X120RTP2: Without Brake (Pin 7 & 14 not connected)
20 19 18 17 16 15 14 13 12 11 10
Benefits * * * * * * * * Low conduction losses Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile
21 22
9 8
23 24
7
1
2
3
4
5
6
All ratings @ Tj = 25C unless otherwise specified
IFSM
Surge Forward Current
tp = 10ms
A
Tj = 150C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-4
APTGS10X120BTP2 - Rev 0
Symbol VRRM ID
Parameter Repetitive Peak Reverse Voltage DC Forward Current
TC = 80C Tj = 25C
Max ratings 1600 10 300 230
Unit V
July, 2003
1. Absolute maximum ratings Diode rectifier Absolute maximum ratings
APTGS10X120RTP2 APTGS10X120BTP2
IGBT & Diode Brake (only for APTGS10X120BTP2) Absolute maximum ratings
Symbol VCES IC ICM VGE PD IF Parameter Collector - Emitter Breakdown Voltage TC = 25C TC = 80C TC = 25C TC = 25C TC = 80C Max ratings 1200 20 10 20 20 100 10 Unit V A V W A
Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation DC Forward Current
Absolute maximum ratings
IGBT & Diode Inverter
Symbol VCES IC ICM VGE PD SCSOA IF IFSM
Parameter Collector - Emitter Breakdown Voltage
Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Short circuit Safe Operating Area DC Forward Current Surge Forward Current
TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C TC = 80C TC = 80C
tp = 1ms
Max ratings 1200 20 10 25 20 100 45A @ 720V 10 20
Unit V A V W A
2. Electrical Characteristics Diodes Rectifier Electrical Characteristics
Symbol Characteristic IR Reverse Current VF RthJC
Forward Voltage Junction to Case
Test Conditions VR = 1600V Tj = 150C Tj = 25C IF = 30A Tj = 150C IF = 10A
Min
Typ 2 1.3 0.9
Max 1.5 0.95 1
Unit mA V
C/W
IGBT Brake & Diode (only for APTGS10X120BTP2) Electrical Characteristics
Symbol Characteristic ICES VCE(on) VGE(th) IGES Cies VF RthJC Test Conditions Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Input Capacitance Forward Voltage Junction to Case VGE = 0V VCE = 1200V Tj = 25C Tj = 125C
Min
Typ 0.5 0.8 2.4 2.75 5.5 600 2.2 2.1
Max 500 2.85 6.5 300 2.55 1.2 2.3
Unit A mA V V nA pF V
C/W July, 2003 2-4 APTGS10X120BTP2 - Rev 0
Tj = 25C VGE = 15V IC = 10A Tj = 125C VGE = VCE , IC = 0.35mA VGE = 20V, VCE = 0V VGE = 0V, VCE = 25V f = 1MHz VGE = 0V Tj = 25C IF = 10A Tj = 125C IGBT Diode
4.5
APT website - http://www.advancedpower.com
APTGS10X120RTP2 APTGS10X120BTP2
IGBT & Diode Inverter Electrical Characteristics
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Cies Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff VF Qrr RthJC Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Input Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy Forward Voltage Reverse Recovery Charge Junction to Case Test Conditions VGE = 0V, IC = 500A Tj = 25C VGE = 0V VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 10A Tj = 125C VGE = VCE , IC = 0.35 mA VGE = 20V, VCE = 0V VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 10A RG = 82 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 10A RG = 82 VGE = 0V IF = 10A IF = 10A VR = 600V di/dt=400A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C IGBT Diode Min
1200
Typ 0.5 0.8 2.4 2.75 5.5 600 40 45 255 40 45 40 285 60 1.1 2.2 2.1 0.84 1.5
Max 500 2.85 6.5 300
Unit V A mA V V nA pF
4.5
ns
ns mJ 2.55 V C 1.2 2.3
C/W
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/50 T25 = 298.16 K
Min
Typ 5 3375
Max
Unit k K
RT =
R25 exp B25 / 50 11 - T25 T
T: Thermistor temperature RT: Thermistor value at T
M5
N.m g
APT website - http://www.advancedpower.com
3-4
APTGS10X120BTP2 - Rev 0
Symbol Characteristic RMS Isolation Voltage, any terminal to case t =1 min, VISOL I isol<1mA, 50/60Hz TJ Operating junction temperature range TSTG Storage Temperature Range TC Operating Case Temperature To Heatsink Torque Mounting torque Wt Package Weight
3. Thermal and package characteristics
Min 2500 -40 -40 -40
Typ
Max 150 125 125 3.3 185
Unit
July, 2003
V C
APTGS10X120RTP2 APTGS10X120BTP2
4. Package outline
PIN 1 PIN 24
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
4-4
APTGS10X120BTP2 - Rev 0
July, 2003

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